Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
Crossref DOI link: https://doi.org/10.1186/s11671-017-2104-y
Published Online: 2017-05-08
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yang, Lifeng
Wang, Tao
Zou, Ying
Lu, Hong-Liang
Funding for this research was provided by:
National Natural Science Foundation of China (51102048, 61376008, and U1632121)
License valid from 2017-05-08