Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing
Crossref DOI link: https://doi.org/10.1186/s11671-017-2133-6
Published Online: 2017-05-19
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pavlyk, Bohdan
Kushlyk, Markiyan
Slobodzyan, Dmytro
License valid from 2017-05-19