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High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Published: 2019-12

Authors

Shao, Yan

Wu, Xiaohan

Zhang, Mei-Na

Liu, Wen-Jun

Ding, Shi-Jin http://orcid.org/0000-0002-5766-089X
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (61474027)
License Information

Text and Data Mining valid from 2019-04-02
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Article History

Received: 28 December 2018

Accepted: 26 March 2019

First Online: 2 April 2019

Competing Interests

: The authors declare that they have no competing interests.

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