MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes
Crossref DOI link: https://doi.org/10.1186/s40486-016-0037-3
Published Online: 2017-01-09
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jang, Munseon
Yun, Kwang-Seok
Funding for this research was provided by:
Ministry of Science, ICT and Future Planning (IITP-2016-H8501-16-1010)
National Research Foundation of Korea (2016R1A2B4014629)
IC Design Education Center
License valid from 2017-01-09