Degradation mechanisms in gate-all-around silicon Nanowire field effect transistor under electrostatic discharge stress – a modeling approach
Crossref DOI link: https://doi.org/10.1186/s40580-014-0011-9
Published Online: 2014-04-24
Published Print: 2014-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tan, Cher Ming
Chen, Xiangchen
License valid from 2014-04-24