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Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs

Published Online: 2016-05-23

Published Print: 2016-10

Authors

Franco, J.

Kaczer, B.

Vais, A.

Alian, A.

Arimura, H.

Putcha, V.

Sioncke, S.

Waldron, N.

Zhou, D.

Nyns, L.

Mitard, J.

Witters, L.

Heyns, M.

Groeseneken, G.

Collaert, N.

Linten, D.

Thean, A.
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First Online: 23 May 2016

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