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Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

Crossref DOI link: https://doi.org/10.1557/adv.2016.417

Published Online: 2016-06-07

Published Print: 2016-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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