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Effect of the formation temperature of the AlN/Si interface on the vertical-direction breakdown voltages of AlGaN/GaN HEMTs on Si substrates

Crossref DOI link: https://doi.org/10.1557/adv.2016.431

Published Online: 2016-06-08

Published Print: 2016-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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