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Electrical Properties of Bottom Gate Poly-Si TFTs by NiSi2 Seed-Induced Lateral Crystallization and Its Applications

Crossref DOI link: https://doi.org/10.1557/adv.2016.509

Published Online: 2016-07-14

Published Print: 2016-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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