Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor
Crossref DOI link: https://doi.org/10.1557/adv.2017.174
Published Online: 2017-02-13
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lu, Jing
Su, Jie
Arif, Ronald
Papasouliotis, George D.
Paranjpe, Ajit
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First Online: 13 February 2017