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High-Power Eu-Doped GaN Red LED Based on a Multilayer Structure Grown at Lower Temperatures by Organometallic Vapor Phase Epitaxy

Crossref DOI link: https://doi.org/10.1557/adv.2017.67

Published Online: 2017-01-19

Published Print: 2017-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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