Electrical characterization of Si-doped n-type α-Ga2O3 on sapphire substrates
Crossref DOI link: https://doi.org/10.1557/adv.2018.45
Published Online: 2018-01-11
Published Print: 2018-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Uchida, Takayuki
Kaneko, Kentaro
Fujita, Shizuo
Text and Data Mining valid from 2018-01-01
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Article History
First Online: 11 January 2018