Selective area growth of InxGa1−xAs nanowires on HfO2 templates for highly scaled nMOS devices
Crossref DOI link: https://doi.org/10.1557/adv.2019.96
Published Online: 2019-09-16
Published Print: 2019-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tejedor, Paloma
Benedicto, Marcos
Text and Data Mining valid from 2019-01-01
Version of Record valid from 2019-09-16
Article History
First Online: 16 September 2019