Se-doped Ge10Sb90 for highly reliable phase-change memory with low operation power
Crossref DOI link: https://doi.org/10.1557/jmr.2017.221
Published Online: 2017-06-22
Published Print: 2017-07
Update policy: https://doi.org/10.1017/policypage
Kim, Jeong Hoon http://orcid.org/0000-0001-9795-3630
Byeon, Dae-Seop
Ko, Dae-Hong
Park, Jeong Hee
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License: Copyright © Materials Research Society 2017