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Band gap-tuned MoS2(1−x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process

Crossref DOI link: https://doi.org/10.1557/jmr.2017.306

Published Online: 2017-08-10

Published Print: 2017-08

Update policy: https://doi.org/10.1017/policypage

Authors

Hibino, Yusuke

Ishihara, Seiya

Sawamoto, Naomi

Ohashi, Takumi

Matsuura, Kentarou

Machida, Hideaki

Wakabayashi, Hitoshi

Ogura, Atsushi
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License: Copyright © Materials Research Society 2017