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Epitaxy growth and characterization of InAs p-i-n photodetector through ion exchange for mid-infrared detection on Si substrates

Crossref DOI link: https://doi.org/10.1557/mrc.2018.152

Published Online: 2018-08-08

Published Print: 2018-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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