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Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

Crossref DOI link: https://doi.org/10.1557/mrc.2018.192

Published Online: 2018-09-17

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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