Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Crossref DOI link: https://doi.org/10.1557/mrs.2018.92
Published Online: 2018-05-10
Published Print: 2018-05
Update policy: https://doi.org/10.1017/policypage
Mikolajick, Thomas
Slesazeck, Stefan
Park, Min Hyuk
Schroeder, Uwe
License valid from 2018-05-10
Copyright and Licensing
License: Copyright © Materials Research Society 2018