High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor
Crossref DOI link: https://doi.org/10.1557/s43579-021-00067-3
Published Online: 2021-07-20
Published Print: 2021-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sai, S. Krishna
Hsin, Yue-Ming
Text and Data Mining valid from 2021-07-20
Version of Record valid from 2021-07-20
Article History
Received: 12 April 2021
Accepted: 8 July 2021
First Online: 20 July 2021