Crossmark

Optimizing the performance of electrostatic-doped SiGe/Si heterostructure nanotube TFET by material analysis evaluating analog and linear parameters

Crossref DOI link: https://doi.org/10.1557/s43579-025-00778-x

Published Online: 2025-07-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sen, Soumya https://orcid.org/0000-0002-6354-5206
Khosla, Mamta

Raman, Ashish
License Information

Text and Data Mining valid from 2025-07-08

Version of Record valid from 2025-07-08
More Information

Article History

Received: 27 May 2025

Accepted: 1 July 2025

First Online: 8 July 2025

Declarations

:

: No conflicts of interest.