PMOS Rc reduction using B2H6 plasma doping process and advanced anneals for the current and next-gen DRAM devices
Crossref DOI link: https://doi.org/10.1557/s43580-025-01201-2
Published Online: 2025-03-05
Published Print: 2025-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bhosle, V. https://orcid.org/0009-0006-5908-620X
Cai, M.
Sharma, S.
Ng, Ben
Liu, Michael
Raj, D.
Text and Data Mining valid from 2025-03-05
Version of Record valid from 2025-03-05
Article History
Received: 18 September 2024
Accepted: 11 February 2025
First Online: 5 March 2025
Declarations
:
: There is no conflict of interest to declare.