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First-principles study of $$\hbox {SiO}_2$$/$$\hbox {MoS}_2$$ and $$\hbox {SiO}_2$$/$$\hbox {WS}_2$$ interfaces: A comparative analysis of surface terminations, van der Waals corrections, and functionals

Crossref DOI link: https://doi.org/10.1557/s43580-025-01287-8

Published Online: 2025-05-19

Published Print: 2025-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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