Current Transient Study of RF GaN HEMTs Biased at Quiescent Point of VDS = 28 V and ID = 100 mA/mm under Different Temperatures
Crossref DOI link: https://doi.org/10.1557/adv.2019.151
Published Online: 2019-03-06
Published Print: 2019-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lin, Yen-Pin
Zhong, Yi Nan
Hsin, Yue-ming
Text and Data Mining valid from 2019-02-01
Version of Record valid from 2019-02-01
Article History
First Online: 6 March 2019