Epitaxial lanthanide oxide thin films on Si for high-<i>k</i> gate dielectric application: Growth optimization and defect passivation
Crossref DOI link: https://doi.org/10.1557/jmr.2017.22
Published Online: 2017-02-08
Published Print: 2017-02-28
Update policy: https://doi.org/10.1017/policypage
Roy Chaudhuri, Ayan
Fissel, Andrea
Osten, Hans Jörg
License valid from 2017-02-08
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License: Copyright © Materials Research Society 2017