Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy
Crossref DOI link: https://doi.org/10.1557/mrc.2016.26
Published Online: 2016-08-15
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Moustakas, Theodore D.
Text and Data Mining valid from 2016-08-15
Version of Record valid from 2016-08-15
Article History
Received: 25 April 2016
Accepted: 27 July 2016
First Online: 15 August 2016