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Post metallization annealing effect utilizing Pt gate electrode for MFSFET with ferroelectric nondoped HfO2 formed by Ar/O2-plasma sputtering

Published Online: 2021-05-13

Published Print: 2021-05

Authors

Ohmi, Shun-ichiro

Kataoka, Masakazu

Hayashi, Masaki
Funding

Funding for this research was provided by:

Japan Society for the Promotion of Science (19H00758)
License Information

Text and Data Mining valid from 2021-05-01

Version of Record valid from 2021-05-01
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Article History

Received: 24 December 2020

Accepted: 5 May 2021

First Online: 13 May 2021

Document is current