Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range
Crossref DOI link: https://doi.org/10.2478/s11772-014-0198-7
Published Print: 2014-01-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Voitsekhovskii, A.
Nesmelov, S.
Dzyadukh, S.