Single-electron transistor with an island formed by several dopant phosphorus atoms
Crossref DOI link: https://doi.org/10.3103/S0027134917050058
Published Online: 2017-12-16
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dagesyan, S. A.
Shorokhov, V. V.
Presnov, D. E.
Soldatov, E. S.
Trifonov, A. S.
Krupenin, V. A.
Snigirev, O. V.
License valid from 2017-09-01