Studying Thin Ge films and Ge/GeO2 interfaces by means of raman–brillouin scattering
Crossref DOI link: https://doi.org/10.3103/S1062873815110246
Published Online: 2015-11-25
Published Print: 2015-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yaacoub, L.
Schamm-Chardon, S.
Ovsyuk, N. N.
Zwick, A.
Groenen, J.
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