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Effect of a Low-Temperature Si Underlayer on the Photoluminescence of Misfit Dislocations in Si(001)Si1 − xGe x Heterostructures with Ge-Rich Alloy Layers

Crossref DOI link: https://doi.org/10.3103/S1062873818040044

Published Online: 2018-05-03

Published Print: 2018-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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