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Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs Heterostructure with a Bulk Active Region for Generating High-Power Subnanosecond Optical Pulses

Crossref DOI link: https://doi.org/10.3103/S1068335623170104

Published Online: 2023-10-07

Published Print: 2023-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Podoskin, A. A.

Shushkanov, I. V.

Shamakhov, V. V.

Rizaev, A. E.

Kondratov, M. I.

Klimov, A. A.

Zazulin, S. V.

Slipchenko, S. O.

Pikhtin, N. A.
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Text and Data Mining valid from 2023-10-01

Version of Record valid from 2023-10-01
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Article History

Received: 4 October 2022

Revised: 4 October 2022

Accepted: 4 October 2022

First Online: 7 October 2023

CONFLICT OF INTEREST

: The authors declare that they have no conflicts of interest.

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