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Analysis of Saturation Mechanisms of High-Power Pulsed Semiconductor Lasers Based on the InGaAsP/InP Heterostructure Emitting at a Wavelength of 1.55 μm

Crossref DOI link: https://doi.org/10.3103/S1068335625602821

Published Online: 2025-12-09

Published Print: 2025-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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