A comparison of time-average power losses in insulated-gate bipolar transistors and hybrid SIT–MOS–transistors
Crossref DOI link: https://doi.org/10.3103/S1068371217020043
Published Online: 2017-04-27
Published Print: 2017-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kyuregyan, A. S.
Gorbatyuk, A. V.
Ivanov, B. V.
License valid from 2017-02-01