Germanium-based metal-insulator-semiconductor transistors as a direction for the further development of CMOS technology
Crossref DOI link: https://doi.org/10.3103/S8756699016050010
Published Online: 2017-01-06
Published Print: 2016-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Neizvestny, I. G.
Text and Data Mining valid from 2016-09-01
Version of Record valid from 2016-09-01
Article History
Received: 30 March 2016
First Online: 6 January 2017