Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference
Crossref DOI link: https://doi.org/10.3103/S0003701X17010091
Published Online: 2017-06-03
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Leiderman, A. Yu.
Saidov, A. S.
Karshiev, A. B.
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