GO/C2S Gate Dielectric Material for Nanoscale Devices Obtained via Pechini Method
Crossref DOI link: https://doi.org/10.3103/S1068375519040136
Published Online: 2019-09-03
Published Print: 2019-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hussein Salmani,
Ali Bahari,
Text and Data Mining valid from 2019-07-01
Version of Record valid from 2019-07-01
Article History
Received: 2 July 2018
Revised: 8 October 2018
Accepted: 11 October 2018
First Online: 3 September 2019
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.