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A Multilayer High-Speed Magnetic-Tunnel-Junction Magneto-resistive RAM Structure with Read-Disturb-Detection Circuit by Using Nano-Electronics Quantum Dot Cellular Method

Crossref DOI link: https://doi.org/10.35940/ijitee.A5183.129219

Published Online: 2019-12-30

Update policy: https://doi.org/10.35940/beiesp.crossmarkpolicy

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