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Low operating voltage InGaZnO thin-film transistors based on Al2O3 high-k dielectrics fabricated using pulsed laser deposition

Crossref DOI link: https://doi.org/10.3938/jkps.64.1437

Published Online: 2014-06-05

Published Print: 2014-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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