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Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O2 mixed-plasma treatment

Crossref DOI link: https://doi.org/10.3938/jkps.65.399

Published Online: 2014-08-19

Published Print: 2014-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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