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Extraction of the interface trap density through the differential subthreshold ideality factor technique in normally-off AlGaN/GaN MOSHFETs

Crossref DOI link: https://doi.org/10.3938/jkps.66.1291

Published Online: 2015-05-06

Published Print: 2015-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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