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Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy

Crossref DOI link: https://doi.org/10.3938/jkps.66.1766

Published Online: 2015-06-19

Published Print: 2015-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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