Dark current improvement of the type-II InAs / GaSb superlattice photodetectors by using a gate bias control
Crossref DOI link: https://doi.org/10.3938/jkps.66.535
Published Online: 2015-03-07
Published Print: 2015-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Ha Sul
Myers, S.
Klein, B.
Kazemi, A.
Krishna, S.
Kim, Jun Oh
Lee, Sang Jun
Text and Data Mining valid from 2015-02-01