Effect of Al content, substrate temperature and nitrogen flow on the reactive magnetron co-sputtered nanostructure in TiAlN thin films intended for use as barrier material in DRAMs
Crossref DOI link: https://doi.org/10.3938/jkps.66.978
Published Online: 2015-04-16
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jalali, Reza
Parhizkar, Mojtaba
Bidadi, Hasan
Naghshara, Hamid
Hosseini, Seyd Reza
Jafari, Majid
Text and Data Mining valid from 2015-03-01