Effects of the group V/III ratio and a gan inter-layer on the crystal quality of InN grown by using the hydride vapor-phase epitaxy method
Crossref DOI link: https://doi.org/10.3938/jkps.66.994
Published Online: 2015-04-16
Published Print: 2015-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ha, Ju-Hyung
Wang, Juan
Lee, Won-Jae
Choi, Young-Jun
Lee, Hae-Yong
Kim, Jung-Gon
Harima, Hiroshi
Text and Data Mining valid from 2015-03-01