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Effect of the Si nanowire’s diameter and doping profile on the electrical characteristics of gate-all-around twin Si-nanowire field-effect transistors

Crossref DOI link: https://doi.org/10.3938/jkps.67.502

Published Online: 2015-08-19

Published Print: 2015-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy