DC and RF characteristics of AlGaN/GaN HEMTs on SiC with gate recessed by using ICP etching of BCl3/Cl2
Crossref DOI link: https://doi.org/10.3938/jkps.67.654
Published Online: 2015-09-04
Published Print: 2015-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yoon, Hyung Sup
Min, Byoung Gue
Lee, Jong Min
Kang, Dong Min
Ahn, Ho Kyun
Kim, Sung Il
Ju, Chul Won
Kim, Hae Cheon
Lim, Jong Won
Text and Data Mining valid from 2015-08-01