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Influence of growth temperature, working gas ratio, and buffer layer in ZnO films grown on (001) Si substrates by using rf-sputtering

Crossref DOI link: https://doi.org/10.3938/jkps.67.676

Published Online: 2015-09-04

Published Print: 2015-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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