Characteristics of resistive switching in ZnO/SiO x multi-layers for transparent nonvolatile memory devices
Crossref DOI link: https://doi.org/10.3938/jkps.69.1798
Published Online: 2016-12-29
Published Print: 2016-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Kyongmin
Kim, Eunkyeom
Kim, Youngill
Sok, Jung Hyun
Park, Kyoungwan
License valid from 2016-12-01