Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices
Crossref DOI link: https://doi.org/10.3938/jkps.69.435
Published Online: 2016-08-18
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hee-Dong
Yun, Min Ju
Kim, Sungho
License valid from 2016-08-01
