Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
Crossref DOI link: https://doi.org/10.3938/jkps.69.439
Published Online: 2016-08-18
Published Print: 2016-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hee-Dong
Yun, Min Ju
Kim, Sungho
License valid from 2016-08-01